The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The method is named after Polish scientist Jan Czochralski, who invented the method in 1915 while investigating the crystallization rates of metals. He made this discovery by accident: instead of dipping his pen into his inkwell, he dipped it in molten tin, and drew a tin filament, which later proved to be a single crystal.
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Great success of large diameter
ASTROHN Technology Ltd specialists have developed a large-diameter infrared (IR) lens. This caused the need to obtain a single crystal of germanium of a sufficiently large diameter (about 200 mm) for the manufacture of an input lens. In addition, the problem of high structural excellence of the workpiece was critical. Therefore, the workpieces must be single-crystal, so that internal defects do not weaken the passage of the beam. Such blanks can only be obtained using the Czochralski method. There is [...]
